China MoTi Alloy Target Suppliers: High-Performance Factory Solutions for Hard Coatings and Semiconductors
Key Functional Features
Copper Diffusion Blocking
Its core value is that it can effectively block the spread of copper atoms to the surrounding dielectric materials in high-temperature processes, and is a key barrier to maintain the electrical integrity and yield of semiconductor copper interconnect structures.
Excellent Electrical Conductivity
As a metal alloy barrier layer, its resistivity is much lower than that of compound barriers such as titanium nitride, which helps reduce the RC delay of interconnect wires in integrated circuits.
Adjustable Work Function
By adjusting the Ti/Mo ratio, the work function can be adjusted within a certain range to meet the specific needs of different optoelectronic devices for matching the energy level of the electrode interface.
Comprehensive Performance of Films
Interfacial Bonding
The deposited film exhibits strong adhesion to silicon, silica, glass, and various polymer substrates, making it ideal for solving interlayer adhesion problems.
Mechanical Properties
The film has both high hardness and good toughness, which can significantly enhance the anti-wear and scratch resistance of the protected workpiece, and extend the service life.
Thermal & Chemical Stability
The thin film structure is not prone to grain coarsening or phase change in high-temperature environments, and can withstand erosion from various chemical environments, ensuring the reliability of devices under harsh conditions.
Craftsmanship & Sedimentation Characteristics
High Deposition Rate & Efficiency
The optimized alloy composition significantly improves the ion bombardment efficiency during sputtering, resulting in higher deposition rates and material utilization.
Extreme Uniformity & Low Defect
Thanks to the microstructure of the target with high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), high-quality film deposition with highly uniform film thickness distribution (inhomogeneity ≤5%), smooth surface, and very low defect density can be achieved.
Extreme Purity & Reliability
Ultra-high purity raw materials (≥99.95%) and tightly controlled low gas content (oxygen, nitrogen, etc.) ensure a stable sputtering process, minimize micro-arcing and particle jetting, and reduce film defects.
Frequently Asked Questions
Q: How does this barrier layer maintain electrical integrity in semiconductor structures?
It effectively blocks the spread of copper atoms to the surrounding dielectric materials during high-temperature processes, acting as a crucial barrier to maintain yield and integrity.
Q: Why is the electrical conductivity of this metal alloy barrier layer superior?
Its resistivity is significantly lower than that of standard compound barriers like titanium nitride, which effectively helps to reduce the RC delay of interconnect wires.
Q: Can this film be adapted for different optoelectronic devices?
Yes. By adjusting the Ti/Mo ratio, the work function can be tuned within a specific range to match the energy level requirements of various electrode interfaces.
Q: What substrates are compatible with this deposited film?
The film exhibits exceptionally strong interfacial bonding and adhesion to silicon, silica, glass, and a variety of polymer substrates.
Q: What factors contribute to the low defect density and high uniformity of the film?
It is achieved through a high-density target (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), resulting in an inhomogeneity of ≤5% and a smooth surface.
Q: How does the film perform under extreme thermal and chemical conditions?
The thin film structure has excellent thermal and chemical stability, meaning it is not prone to grain coarsening or phase changes at high temperatures and resists chemical erosion.