China Suppliers Factory - High-Performance Magnesium Zinc Oxide Sputtering Target for UV Optoelectronics
Adjustable Optoelectronic Properties
Adjustable Bandgap
By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV for ZnO and 7.8 eV for MgO, which is key to realizing ultraviolet photonic devices.
High Visible Light Transmittance
The material maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it suitable for transparent electronic devices.
Excellent Crystal Quality
Under appropriate Mg content and processing conditions, high-quality hexagonal wurtzite structure crystalline films can be formed, ensuring device performance.
High Sputtering Performance
Dense and Uniform Structure
High density (≥5.6 g/cm³) and high purity (≥99.99%) ensure stable sputtering process, high film quality, and minimal particle generation.
Stability of Composition
Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process, ensuring consistency of the thin film composition.
Excellent Process Compatibility
Can be deposited under room to medium temperature conditions, compatible with various semiconductor processes.
Enhanced Physical and Chemical Properties
High Thermal & Chemical Stability
The introduction of MgO enhances the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
High Resistivity
The intrinsic MZO film has high resistivity, making it an ideal choice for preparing buffer layers in semiconductor devices. Conductivity can be achieved through doping with elements such as Al and Ga, allowing for flexible applications.
A1: The bandgap can be continuously adjusted between 3.37 eV (for ZnO) and 7.8 eV (for MgO) by changing the doping ratio of Mg (the x value).
A2: Yes, the material maintains the high transparency of ZnO, achieving a visible light transmittance greater than 80% in the visible spectrum.
A3: The target material features a high density of ≥5.6 g/cm³ and a high purity of ≥99.99%, ensuring a stable sputtering process and minimal particle generation.
A4: Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate and consistent composition transfer during sputtering.
A5: Yes, MZO features excellent process compatibility and can be successfully deposited under room to medium temperature conditions.
A6: Yes. While intrinsic MZO films have high resistivity (making them ideal for buffer layers), conductivity can be modified through doping with elements such as Al and Ga.