China Suppliers Factory Magnesium Zinc Oxide (ZnMgO) Sputtering Target for UV Optoelectronics and Wide-Bandgap Semiconductor Applications
Adjustable Optoelectronic Properties
Adjustable Bandgap
By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV for ZnO and 7.8 eV for MgO, which is key to realizing ultraviolet photonic devices.
High Visible Light Transmittance
The material maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it suitable for transparent electronic devices.
Excellent Crystal Quality
Under appropriate Mg content and processing conditions, high-quality hexagonal wurtzite structure crystalline films can be formed, ensuring device performance.
High Sputtering Performance
Dense and Uniform Structure
High density (≥5.6 g/cm³) and high purity (≥99.99%) ensure stable sputtering process, high film quality, and minimal particle generation.
Stability of Composition
Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process, ensuring consistency of the thin film composition.
Excellent Process Compatibility
Can be deposited under room to medium temperature conditions, compatible with various semiconductor processes.
Enhanced Physical and Chemical Properties
High Thermal & Chemical Stability
The introduction of MgO enhances the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
High Resistivity & Tunable Conductivity
The intrinsic MZO film has high resistivity, making it an ideal choice for preparing buffer layers in semiconductor devices. Conductivity can be achieved through doping with elements such as Al and Ga, allowing for flexible applications.
Frequently Asked Questions (FAQ)
The bandgap can be continuously adjusted between 3.37 eV (ZnO) and 7.8 eV (MgO) by changing the doping ratio of Mg (x value).
Yes. The material maintains the high transparency of ZnO, with a visible light transmittance greater than 80%, making it highly suitable for transparent electronic applications.
A dense and uniform structure with high density (≥5.6 g/cm³) and high purity (≥99.99%) ensures a stable sputtering process with minimal particle generation.
The introduction of MgO enhances both the thermal and chemical stability, providing excellent corrosion resistance and making it suitable for harsher working environments.
Yes. While the intrinsic MZO film has high resistivity (ideal for buffer layers), desired conductivity can be achieved by doping it with elements such as Al and Ga.