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High-purity tungsten target 300mm W Target

High-purity tungsten target 300mm W Target
Tungsten titanium alloy target 300mm WTi Target

Tungsten titanium alloy target 300mm WTi Target
Reliable 300mm WSi Target for Enhanced Performance

Reliable 300mm WSi Target for Enhanced Performance
High-Purity 300mm Cr Target for Precision Applications

High-Purity 300mm Cr Target for Precision Applications
Iron Cobalt Tantalum alloy FeCoTa

Iron Cobalt Tantalum alloy FeCoTa
MoSi alloy target：excellent Film uniformity

MoSi alloy target：excellent Film uniformity
MoTi alloy target：core material for hard coating

MoTi alloy target：core material for hard coating
CrSi alloy target：customizable to different specifications

CrSi alloy target：customizable to different specifications
Molybdenum target:specifically used for sputter coating

Molybdenum target:specifically used for sputter coating
Boron Carbide target：special for PVD

Boron Carbide target：special for PVD
WTi target.jpg
WTi.jpg
WTi target.jpg
WTi.jpg

China Suppliers Factory of High-Purity 300mm Tungsten Titanium Alloy Target for Advanced Manufacturing

Tungsten titanium alloy targets are manufactured using advanced powder metallurgy technology, combining the superior properties of tungsten and titanium. These alloys exhibit higher density and purity, outstanding corrosion resistance, and minimal volumetric expansion effects. Such characteristics significantly minimize particle formation during the production process, ensuring the successful fabrication of high-quality products. As leading suppliers in China, our factory delivers tungsten and tungsten titanium targets that meet various specifications, with chemical purity typically ranging from 99.99% to 99.999%. We also offer customization options tailored to specific application requirements, ensuring that our clients receive the ideal solution for their needs
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    Product Detail

    Characteristics
    Film performance and process adaptability
    High barrier properties
    WTi films have a very low diffusion coefficient, which can effectively prevent the diffusion of copper (Cu) atoms to the silicon substrate or dielectric layer, and is a key diffusion barrier material for copper interconnects in advanced processes.
    Strong adhesion
    The active properties of Ti significantly improve the bonding strength of the film with the substrate (such as SiO₂, low-k media) and the upper metal (such as Cu), and inhibit film peeling.
    Low resistivity
    The optimized grain boundary structure makes the film resistivity lower than that of pure TiN and other compounds, reducing the resistance of the interconnect line.
    Stability of the sputtering process
    Uniform alloy phase structure
    Through high-purity raw materials and homogenization processes, ensure the consistent distribution of target components and achieve high uniformity of film thickness and components.
    High sputtering rate
    High density and low impurities improve sputtering efficiency and reduce process costs.
    Anti-noduling and arc control
    Optimized grain size and microstructure reduce particle spatter and abnormal discharge during sputtering, ensuring process stability.
    Chemistry and Thermal Stability
    High temperature oxidation resistance
    In the high temperature environment of PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.
    Corrosion resistance
    It has strong resistance to etching gas and wet cleaning solution to ensure subsequent process compatibility.
    Flexible process compatibility
    Reaction sputtering adaptation
    WTiN composite film can be sputtered in a mixed nitrogen/argon atmosphere to further improve the barrier performance and hardness.
    Multilayer film integration
    compatible with Ta/TaN, Co, Ru and other film materials, supporting complex laminated structure design.
    Frequently Asked Questions (FAQ)
    Q: What makes WTi films an effective diffusion barrier?

    WTi films have a very low diffusion coefficient, which effectively prevents the diffusion of copper (Cu) atoms to the silicon substrate or dielectric layer in advanced interconnect processes.

    Q: How does WTi film ensure strong adhesion to substrates?

    The active properties of Ti significantly improve the bonding strength of the film with substrates like SiO₂ and low-k media, as well as upper metals like Cu, which inhibits film peeling.

    Q: What are the benefits of the optimized grain boundary structure in WTi films?

    The optimized grain boundary structure makes the film resistivity lower than that of pure TiN and other compounds, reducing the resistance of the interconnect line.

    Q: How is sputtering stability maintained during the process?

    Sputtering stability is maintained through a uniform alloy phase structure, high sputtering rates, and optimized grain size/microstructure which reduces particle spatter and abnormal discharge.

    Q: Can WTi films withstand high-temperature environments?

    Yes, in the high-temperature environment of a PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.

    Q: How compatible are WTi films with other materials?

    WTi films offer flexible process compatibility. They are compatible with Ta/TaN, Co, Ru, and other film materials, supporting complex laminated structure design and reaction sputtering in mixed nitrogen/argon atmospheres.