China Suppliers MZO Sputtering Target Factory - High-Performance Magnesium Zinc Oxide for UV Optoelectronics
Adjustable optoelectronic properties
Adjustable bandgap
By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV for ZnO and 7.8 eV for MgO, which is key to realizing ultraviolet photonic devices.
High visible light transmittance
The material maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it suitable for transparent electronic devices.
Excellent crystal quality
Under appropriate Mg content and processing conditions, high-quality hexagonal wurtzite structure crystalline films can be formed, ensuring device performance.
High sputtering performance
Dense and uniform structure
High density (≥5.6 g/cm³) and high purity (≥99.99%) ensure stable sputtering process, high film quality, and minimal particle generation.
Stability of composition
Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process, ensuring consistency of the thin film composition.
Excellent process compatibility
Can be deposited under room to medium temperature conditions, compatible with various semiconductor processes.
Enhanced physical and chemical properties
High thermal stability and chemical stability
The introduction of MgO enhances the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
High resistivity
The intrinsic MZO film has high resistivity, making it an ideal choice for preparing buffer layers in semiconductor devices. Conductivity can be achieved through doping with elements such as Al and Ga, allowing for flexible applications.
Frequently Asked Questions (FAQ)
1. How can the bandgap of this material be adjusted?
The bandgap can be continuously adjusted between 3.37 eV (for ZnO) and 7.8 eV (for MgO) by changing the doping ratio of Mg (x value).
2. Is this material suitable for transparent electronic devices?
Yes. It maintains the high transparency of ZnO, achieving a light transmittance greater than 80% in the visible light region.
3. What ensures the stable sputtering process of this target material?
Its high density (≥5.6 g/cm³), high purity (≥99.99%), and uniform distribution of Zn and Mg elements ensure a stable sputtering process with minimal particle generation.
4. What is the process compatibility of the deposition?
It features excellent process compatibility and can be successfully deposited under room to medium temperature conditions, making it compatible with various semiconductor processes.
5. Can the conductivity of the MZO film be adjusted?
Yes. While the intrinsic MZO film has high resistivity (ideal for buffer layers), conductivity can be flexibly achieved through doping with elements such as Al and Ga.
6. How does the addition of MgO affect the material's durability?
The introduction of MgO significantly enhances the thermal stability and chemical corrosion resistance of the material, making it suitable for harsher working environments.