China Suppliers Tungsten Titanium Alloy Target 300mm - High Purity WTi Target from Factory
Film Performance & Process Adaptability
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High barrier properties
WTi films have a very low diffusion coefficient, which can effectively prevent the diffusion of copper (Cu) atoms to the silicon substrate or dielectric layer, and is a key diffusion barrier material for copper interconnects in advanced processes.
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Strong adhesion
The active properties of Ti significantly improve the bonding strength of the film with the substrate (such as SiO₂, low-k media) and the upper metal (such as Cu), and inhibit film peeling.
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Low resistivity
The optimized grain boundary structure makes the film resistivity lower than that of pure TiN and other compounds, reducing the resistance of the interconnect line.
Stability of the Sputtering Process
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Uniform alloy phase structure
Through high-purity raw materials and homogenization processes, ensure the consistent distribution of target components and achieve high uniformity of film thickness and components.
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High sputtering rate
High density and low impurities improve sputtering efficiency and reduce process costs.
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Anti-noduling and arc control
Optimized grain size and microstructure reduce particle spatter and abnormal discharge during sputtering, ensuring process stability.
Chemistry and Thermal Stability
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High temperature oxidation resistance
In the high temperature environment of PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.
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Corrosion resistance
It has strong resistance to etching gas and wet cleaning solution to ensure subsequent process compatibility.
Flexible Process Compatibility
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Reaction sputtering adaptation
WTiN composite film can be sputtered in a mixed nitrogen/argon atmosphere to further improve the barrier performance and hardness.
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Multilayer film integration
Compatible with Ta/TaN, Co, Ru and other film materials, supporting complex laminated structure design.
WTi films possess a very low diffusion coefficient, which effectively prevents copper (Cu) atoms from diffusing into the silicon substrate or dielectric layer during advanced semiconductor manufacturing processes.
The active properties of Ti significantly enhance the bonding strength of the film with both the underlying substrate (such as SiO₂ and low-k media) and the upper metal layer (like Cu), preventing film peeling.
An optimized grain boundary structure reduces the resistivity of WTi films compared to pure TiN and other compounds, which helps lower the overall resistance of the interconnect lines.
By optimizing the grain size and microstructure, WTi reduces particle spatter and abnormal discharge (arcing) during sputtering. Additionally, a uniform alloy phase structure and high density ensure consistent film thickness and high sputtering rates.
Yes, WTi films maintain structural stability and resist oxidation-induced performance degradation in the high-temperature environments of PVD cavities ranging from 300°C to 500°C.
WTi is compatible with multilayer designs using materials like Ta/TaN, Co, and Ru. It also supports reaction sputtering in mixed nitrogen/argon atmospheres to form WTiN composite films for enhanced hardness and barrier performance.