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Among the many wide bandgap semiconductor materials, Silicon Carbide (SiC) has become a material that has attracted much attention, especially in the field of high power conversion. It is widely used in traction inverters and on-board chargers for electric vehicles (EVs), as well as in infrastructure sectors such as DC fast charging, solar inverters, energy storage systems, and uninterruptible power supplies (UPS). Although silicon carbide has been used in mass production for over a hundred years, initially primarily as an abrasive material, it has also demonstrated excellent performance for high-voltage and high-power applications.

In the collective perception, Ceramics Are considered fragile items. However, after processing with modern technology, ceramics have undergone a remarkable transformation into a hard and high-strength new material. This is particularly evident in the field of ballistic protection, where ceramics have shone brightly, becoming a highly sought-after material for bulletproof applications.

Boron carbide is a non-oxide ceramic material that is widely used in the fields of energy, military, nuclear energy, and bulletproof applications due to its high melting point, high hardness, low density, good thermal stability, strong chemical erosion resistance, and strong neutron absorption capacity. Known as black diamond, Boron Carbide is the third hardest material, after diamond and cubic boron nitride, thus making it an important member of the superhard materials family.

Since entering the 21st century, with the rapid development of electronic technology, the level of integration and assembly density of electronic components has been continuously improved, making heat dissipation a key factor affecting the performance and reliability of devices. Taking high-power LED packaging as an example, only about 20% to 30% of the input power is converted into light energy, while the remaining 70% to 80% is converted into heat. The accumulation of this large amount of heat can lead to serious consequences.

In today's fast-paced technological era, the field of semiconductor materials is undergoing a profound transformation. The third-generation wide bandgap semiconductor material, silicon carbide (SiC), is gaining significant attention globally due to its outstanding physical properties and is emerging prominently in various high-tech applications.

In the era of 5G, the smartphone industry is undergoing a transformation, with zirconia ceramics emerging as a favored material for smartphone backs in this round of technological reshuffling. In 2018, the release of Xiaomi's phone in a color known as 'Jade Green' marked the beginning of the era of colored ceramic smartphones, gradually familiarizing the public with colored zirconia.

Boron nitride is a crystal comprised of nitrogen and boron atoms. In addition to the common hexagonal boron nitride (h-BN or white graphite), there are variants such as cubic boron nitride (CBN), rhombohedral boron nitride (RBN), and wurtzite boron nitride (WBN). Scientists have even discovered two-dimensional boron nitride crystals with properties similar to those of graphene.

Silicon nitride is an inorganic compound with the chemical formula Si₃N₄. It is insoluble in water, with a molecular weight of 140.283 and appears gray or grayish-white. It belongs to a class of high-temperature insoluble compounds, exhibiting no melting point and strong resistance to high-temperature creep. Its solubility is limited to hydrofluoric acid and hot phosphoric acid, as it does not react with other inorganic acids, demonstrating high corrosion resistance. Silicon nitride (Si₃N₄) exists in three crystallographic forms: α, β, and γ phases. The α and β phases are the most common forms of Si₃N₄ and can be synthesized at atmospheric pressure. The γ phase can only be obtained under conditions of high pressure and high temperature, with a hardness that can reach 35 GPa.

In the context of the global energy transition and the accelerating wave of electrification, silicon carbide (SiC), as a core representative of third-generation semiconductors, is strategically advancing from material innovation to industrial restructuring. Its outstanding properties of high voltage resistance, high-temperature durability, and low loss facilitate rapid penetration into sectors such as electric vehicles, high-end power electronics, aerospace, and data communications. By 2024, the global SiC market is expected to reach $2.944 billion, and it is projected to exceed $14.2 billion by 2029, with a compound annual growth rate of 34.9% over five years, making it one of the strongest growth areas within the wide bandgap semiconductor market. This report conducts a systematic analysis of market structure, industry chain, regional evolution, customer behavior, and strategic opportunities, aiming to provide forward-looking insights and empirical support for corporate strategies, capital investments, and policy-making.

Alumina has long played an important role in the national economy as a raw material for aluminum products and as a supplementary material in traditional industries such as petrochemicals and machinery. Currently, with the continuous emergence and rapid development of emerging industries such as communication, new energy, and semiconductors, the demand for high-performance new materials has become increasingly strong. Certain high-end alumina products have gained traction in this context, especially in the trillion-dollar markets of new energy and semiconductors, where alumina has become a critical foundational material.