Products Categories

Products

High-purity tungsten target 300mm W Target

Tungsten titanium alloy target 300mm WTi Target

Reliable 300mm WSi Target for Enhanced Performance

High-Purity 300mm Cr Target for Precision Applications

Iron Cobalt Tantalum alloy FeCoTa

MoSi alloy target：excellent Film uniformity

MoTi alloy target：core material for hard coating

CrSi alloy target：customizable to different specifications

Molybdenum target:specifically used for sputter coating

Boron Carbide target：special for PVD

High-performance Boron Nitride Ceramics from China - Leading Suppliers & Factory for Sintered Plates & Crucibles

Boron nitride ceramics, often dubbed 'white graphene,' are high-performance advanced ceramic materials distinguished by their unique crystal structures such as hexagonal, cubic, and wurtzite. Manufactured by top suppliers in China, these ceramics boast exceptional thermal conductivity, outstanding electrical insulation, and remarkable resistance to high temperatures and chemicals. Their unparalleled combination of properties makes them indispensable in high-end industries, including electronics, metallurgy, and aerospace. As a leading factory in the production of boron nitride ceramics, we ensure that our products meet the highest standards of quality and performance, catering to the growing demand in various critical applications.

Product Detail

High Temperature Stability

h-BN can withstand temperatures of up to 2000°C in an inert atmosphere and remains stable in an oxidizing environment up to 900°C.

c-BN does not convert to h-BN below 1400°C.

Thermal Property

h-BN has better thermal conductivity than aluminum oxide (parallel to c-axis: 400 W/m·K, perpendicular to c-axis: 30 W/m·K).

It exhibits a low coefficient of thermal expansion (h-BN: parallel to c-axis -2.7×10⁻⁶/°C, perpendicular to c-axis 38×10⁻⁶/°C).

Mechanical Property

h-BN has a low hardness (Mohs hardness ~2) and excellent machinability; c-BN has a hardness second only to diamonds.

h-BN exhibits excellent thermal shock resistance due to its low elastic modulus.

Electrical Property

h-BN is a high-quality insulator (resistivity > 10¹⁴ Ω·cm, dielectric constant ~ 4).

c-BN is a wide-bandgap semiconductor (bandgap width ~ 6.4 eV).

Chemical Inertness

Resistant to corrosion by molten metals (such as aluminum and copper), and does not react with acids/bases (except for concentrated sulfuric acid and molten alkali).

Frequently Asked Questions

What is the temperature limit for h-BN stability?

h-BN can withstand temperatures of up to 2000°C in an inert atmosphere and remains stable in an oxidizing environment up to 900°C.

At what temperature does c-BN convert to h-BN?

c-BN does not convert to h-BN below temperatures of 1400°C.

How does the thermal conductivity of h-BN compare to aluminum oxide?

h-BN has better thermal conductivity than aluminum oxide, measuring 400 W/m·K parallel to the c-axis and 30 W/m·K perpendicular to the c-axis.

What are the mechanical differences between h-BN and c-BN?

h-BN has a low hardness (Mohs hardness ~2) and excellent machinability, while c-BN has a high hardness that is second only to diamonds.

Is h-BN an electrical insulator or semiconductor?

h-BN is a high-quality electrical insulator with a resistivity greater than 10¹⁴ Ω·cm and a dielectric constant of approximately 4. In contrast, c-BN acts as a wide-bandgap semiconductor.

Does h-BN react with molten metals or acids?

h-BN is resistant to corrosion by molten metals like aluminum and copper. It does not react with acids or bases, except for concentrated sulfuric acid and molten alkali.