High-Purity Molybdenum Target for Sputter Coating - China Suppliers & Factory
High-temperature stability and mechanical properties
Ultra-high melting point: 2623°C
Maintains structural stability in high-temperature sputtering environments (300~800°C) with strong resistance to thermal deformation.
High-temperature strength
Maintains high hardness and creep resistance at high temperatures, ensuring the target material does not crack or deform during long-term processes.
Thermal expansion coefficient (4.8×10⁻⁶/K)
Good thermal compatibility with silicon and glass substrates, reducing delamination or cracking caused by thermal stress of the film.
Conductivity and thermal management performance
High conductivity
Improves sputtering efficiency and reduces process energy consumption.
High thermal conductivity
Quickly conducts sputtering heat to prevent target cracking or droplet splashing caused by local overheating, ensuring film uniformity.
Characteristics of Thin Film Deposition
Low sputtering rate
Requires high power excitation, but results in a dense deposited film layer with strong adhesion.
High density
Reduces porosity and defects during sputtering, improving film purity and compactness.
Controllable grain size
Achieves fine grain structure through process optimization, reduces sputtering particles, and improves the surface finish of the film layer.
Chemical stability and multifunctionality
Corrosion resistance
Resistant to most acids, alkalis, and process gases (such as O₂, N₂), making it suitable for reactive sputtering (such as deposited MoO₃, MoN).
Low oxygen affinity
Not easily oxidized at high temperatures, maintaining the characteristics of high-purity metal films (requires controlling the oxygen content of the cavity).
Frequently Asked Questions (FAQ)
1. How does the ultra-high melting point benefit high-temperature sputtering?
With a melting point of 2623°C, the material maintains excellent structural stability and resists thermal deformation within high-temperature sputtering environments ranging from 300°C to 800°C.
2. Why is the thermal expansion coefficient of this material important for substrates?
Its thermal expansion coefficient of 4.8×10⁻⁶/K provides excellent thermal compatibility with silicon and glass substrates, which significantly minimizes cracking or delamination caused by thermal stress.
3. How does high thermal conductivity improve target reliability?
High thermal conductivity rapidly dissipates heat generated during sputtering. This prevents localized overheating, target cracking, and droplet splashing, ensuring a highly uniform film layer.
4. What advantages does a low sputtering rate offer?
Although it requires high power excitation, a low sputtering rate ensures that the deposited film layer is exceptionally dense and exhibits strong adhesion to the substrate.
5. Is this material suitable for reactive sputtering environments?
Yes. Because of its outstanding corrosion resistance against most acids, alkalis, and process gases like O₂ and N₂, it is highly suitable for reactive sputtering applications, such as depositing MoO₃ and MoN.