High-Purity Tungsten Target 300mm - China Suppliers and Factory for PVD Applications
Characteristics
Superb Film Formation Quality and Stability
- The formed film has extremely high thermal stability and chemical inertness, is resistant to high-temperature oxidation, and can operate at temperatures exceeding 1000°C;
- The film layer is dense and uniform, with strong adhesion, compatible with various substrates (such as silicon, glass, ceramics, etc.), and not prone to peeling;
- Having low resistivity and good thermal conductivity, making it suitable for high-power and high-frequency electronic devices.
Efficient Coating Process Performance
- The sputtering rate is high, the process reproducibility is good, and the target material utilization rate is high, making it suitable for large-scale continuous production;
- The grain size is small and uniform (usually controlled between 10–40μm), with low surface roughness and few defects;
- Exhibits good stability and deposition consistency in processes such as DC magnetron sputtering and HiPIMS.
Wide Range of Environmental and Process Adaptability
- Acid and corrosion resistance, stable performance in most wet and plasma processes;
- Supports low-temperature deposition (can be below 200°C), suitable for heat-sensitive functional devices and flexible substrates;
- Compatible with lithography processes (such as lithography, etching, CMP) to meet the multi-step integration needs of semiconductor manufacturing.
Frequently Asked Questions (FAQ)
What is the thermal stability limit of the formed film?
The formed film exhibits extremely high thermal stability and chemical inertness, allowing it to resist high-temperature oxidation and operate effectively at temperatures exceeding 1000°C.
Which substrates are compatible with this film layer?
The film is highly compatible with a wide variety of substrates, including silicon, glass, and ceramics. It features strong adhesion and is highly resistant to peeling.
Is this process suitable for high-power electronic devices?
Yes, due to its low resistivity and excellent thermal conductivity, the film is highly suitable for both high-power and high-frequency electronic devices.
What is the typical grain size and surface quality of the coating?
The coating features a small and uniform grain size, typically controlled between 10–40μm, which ensures low surface roughness and minimizes defects.
Can this film be deposited at low temperatures?
Yes, the process supports low-temperature deposition (below 200°C), making it ideal for flexible substrates and heat-sensitive functional devices.
Is the coating process compatible with semiconductor manufacturing?
Absolutely. It is fully compatible with standard lithography processes, including lithography, etching, and Chemical Mechanical Planarization (CMP), meeting the multi-step integration requirements of semiconductor manufacturing.