High-Purity Tungsten Target 300mm - China Suppliers and Factory for PVD Applications
Characteristics
Superb film formation quality and stability
- The formed film has extremely high thermal stability and chemical inertness, is resistant to high-temperature oxidation, and can operate at temperatures exceeding 1000°C;
- The film layer is dense and uniform, with strong adhesion, compatible with various substrates (such as silicon, glass, ceramics, etc.), and not prone to peeling;
- Having low resistivity and good thermal conductivity, making it suitable for high-power and high-frequency electronic devices.
Efficient coating process performance
- The sputtering rate is high, the process reproducibility is good, and the target material utilization rate is high, making it suitable for large-scale continuous production;
- The grain size is small and uniform (usually controlled between 10–40μm), with low surface roughness and few defects;
- Exhibits good stability and deposition consistency in processes such as DC magnetron sputtering and HiPIMS.
Wide range of environmental and process adaptability
- Acid and corrosion resistance, stable performance in most wet and plasma processes;
- Supports low-temperature deposition (can be below 200°C), suitable for heat-sensitive functional devices and flexible substrates;
- Compatible with lithography processes (such as lithography, etching, CMP) to meet the multi-step integration needs of semiconductor manufacturing.
Frequently Asked Questions
What is the thermal stability of the formed film?
The formed film exhibits extremely high thermal stability and chemical inertness. It is highly resistant to high-temperature oxidation and can operate effectively at temperatures exceeding 1000°C.
Which substrates are compatible with this coating process?
The film layer is compatible with a wide variety of substrates, including silicon, glass, and ceramics. It features strong adhesion and is highly resistant to peeling.
What is the typical grain size and surface quality?
The grain size is small and uniform, typically controlled between 10–40μm. This ensures low surface roughness and a minimal number of defects in the final layer.
Can this film deposition process be performed at low temperatures?
Yes, the process supports low-temperature deposition (can be below 200°C), making it ideal for heat-sensitive functional devices and flexible substrates.
Is this process compatible with semiconductor manufacturing workflows?
Yes, it is fully compatible with standard lithography processes, including lithography, etching, and CMP, meeting the multi-step integration requirements of semiconductor manufacturing.