High-Purity Tungsten Target 300mm - China Suppliers Factory for PVD Applications
Characteristics
Superb film formation quality and stability
- The formed film has extremely high thermal stability and chemical inertness, is resistant to high-temperature oxidation, and can operate at temperatures exceeding 1000°C.
- The film layer is dense and uniform, with strong adhesion, compatible with various substrates (such as silicon, glass, ceramics, etc.), and not prone to peeling.
- Having low resistivity and good thermal conductivity, making it suitable for high-power and high-frequency electronic devices.
Efficient coating process performance
- The sputtering rate is high, the process reproducibility is good, and the target material utilization rate is high, making it suitable for large-scale continuous production.
- The grain size is small and uniform (usually controlled between 10–40μm), with low surface roughness and few defects.
- Exhibits good stability and deposition consistency in processes such as DC magnetron sputtering and HiPIMS.
Wide range of environmental and process adaptability
- Acid and corrosion resistance, stable performance in most wet and plasma processes.
- Supports low-temperature deposition (can be below 200°C), suitable for heat-sensitive functional devices and flexible substrates.
- Compatible with lithography processes (such as lithography, etching, CMP) to meet the multi-step integration needs of semiconductor manufacturing.
Frequently Asked Questions
Q:
What is the maximum operating temperature for the formed film?
The formed film has extremely high thermal stability and chemical inertness, allowing it to operate at temperatures exceeding 1000°C while resisting high-temperature oxidation.
Q:
Which substrates are compatible with this film formation process?
The film layer is highly compatible with various substrates, including silicon, glass, ceramics, and even heat-sensitive flexible substrates.
Q:
What are the typical grain sizes and surface characteristics of the coating?
The grain size is small and uniform, typically controlled between 10–40μm, which ensures low surface roughness and minimal defects.
Q:
Can this coating process be applied at low temperatures?
Yes, it supports low-temperature deposition (which can be below 200°C), making it ideal for heat-sensitive functional devices and flexible substrates.
Q:
Is the film compatible with standard semiconductor manufacturing integration?
Yes, it is fully compatible with standard lithography processes, including lithography, etching, and chemical mechanical planarization (CMP), meeting the multi-step integration needs of semiconductor manufacturing.
Q:
What sputtering technologies are supported by this material?
It exhibits excellent stability and deposition consistency in processes such as DC magnetron sputtering and High-Power Impulse Magnetron Sputtering (HiPIMS).