High-Purity Tungsten Target 300mm - Trusted China Suppliers & Factory for PVD Applications
Characteristics
Superb Film Formation Quality and Stability
- The formed film has extremely high thermal stability and chemical inertness, is resistant to high-temperature oxidation, and can operate at temperatures exceeding 1000°C.
- The film layer is dense and uniform, with strong adhesion, compatible with various substrates (such as silicon, glass, ceramics, etc.), and not prone to peeling.
- Having low resistivity and good thermal conductivity, making it suitable for high-power and high-frequency electronic devices.
Efficient Coating Process Performance
- The sputtering rate is high, the process reproducibility is good, and the target material utilization rate is high, making it suitable for large-scale continuous production.
- The grain size is small and uniform (usually controlled between 10–40μm), with low surface roughness and few defects.
- Exhibits good stability and deposition consistency in processes such as DC magnetron sputtering and HiPIMS.
Wide Range of Adaptability
- Acid and corrosion resistance, stable performance in most wet and plasma processes.
- Supports low-temperature deposition (can be below 200°C), suitable for heat-sensitive functional devices and flexible substrates.
- Compatible with lithography processes (such as lithography, etching, CMP) to meet the multi-step integration needs of semiconductor manufacturing.
Frequently Asked Questions
What is the thermal stability and operating temperature limit of the film?
The formed film exhibits extremely high thermal stability and chemical inertness. It is highly resistant to high-temperature oxidation and can operate reliably at temperatures exceeding 1000°C.
Which substrates are compatible with this coating?
The film layer has strong adhesion and is compatible with a wide variety of substrates, including silicon, glass, ceramics, and heat-sensitive flexible substrates.
What is the typical grain size of the target material?
The grain size is small and uniform, typically controlled between 10–40μm. This helps ensure low surface roughness and minimizes defects during the deposition process.
Can this film be deposited at low temperatures?
Yes, the process supports low-temperature deposition (which can be below 200°C), making it highly suitable for heat-sensitive functional devices and flexible substrates.
Is the film compatible with semiconductor manufacturing processes?
Yes, it is fully compatible with standard lithography processes, including lithography, etching, and Chemical Mechanical Planarization (CMP), meeting the multi-step integration needs of semiconductor manufacturing.
Which sputtering methods are supported?
It exhibits excellent stability and deposition consistency in common coating processes, including DC magnetron sputtering and High-Power Impulse Magnetron Sputtering (HiPIMS).