High Purity Tungsten Titanium Alloy Target 300mm - China Suppliers & Factory for Quality Applications
Characteristics
Film Performance & Process Adaptability
- High barrier properties WTi films have a very low diffusion coefficient, which can effectively prevent the diffusion of copper (Cu) atoms to the silicon substrate or dielectric layer, and is a key diffusion barrier material for copper interconnects in advanced processes.
- Strong adhesion The active properties of Ti significantly improve the bonding strength of the film with the substrate (such as SiO₂, low-k media) and the upper metal (such as Cu), and inhibit film peeling.
- Low resistivity The optimized grain boundary structure makes the film resistivity lower than that of pure TiN and other compounds, reducing the resistance of the interconnect line.
Stability of the Sputtering Process
- Uniform alloy phase structure Through high-purity raw materials and homogenization processes, ensure the consistent distribution of target components and achieve high uniformity of film thickness and components.
- High sputtering rate High density and low impurities improve sputtering efficiency and reduce process costs.
- Anti-noduling and arc control Optimized grain size and microstructure reduce particle spatter and abnormal discharge during sputtering, ensuring process stability.
Chemistry and Thermal Stability
- High temperature oxidation resistance In the high temperature environment of PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.
- Corrosion resistance It has strong resistance to etching gas and wet cleaning solution to ensure subsequent process compatibility.
Flexible Process Compatibility
- Reaction sputtering adaptation WTiN composite film can be sputtered in a mixed nitrogen/argon atmosphere to further improve the barrier performance and hardness.
- Multilayer film integration Compatible with Ta/TaN, Co, Ru and other film materials, supporting complex laminated structure design.
Frequently Asked Questions
Why are WTi films used as barrier materials in copper interconnects?
WTi films possess a very low diffusion coefficient. This characteristic effectively blocks copper (Cu) atoms from diffusing into the silicon substrate or dielectric layers, making them vital diffusion barrier materials in advanced semiconductor processing.
How do WTi films enhance adhesion to substrates?
The active chemical properties of Titanium (Ti) within the alloy significantly enhance the bonding strength between the film and substrates (such as SiO₂ and low-k dielectrics) as well as the upper metal layer (Cu), preventing film peeling.
What measures ensure sputtering process stability for WTi targets?
Process stability is achieved through a uniform alloy phase structure from high-purity raw materials, high density for faster sputtering rates, and optimized grain structures that prevent nodulation and abnormal discharge (arcing).
How do WTi films perform under high-temperature conditions?
WTi films exhibit high-temperature oxidation resistance. They maintain structural integrity and resist performance degradation within PVD cavities operating at temperatures between 300°C and 500°C.
Can WTi films be integrated with other materials?
Yes, WTi films offer flexible process compatibility. They can be integrated into complex laminated designs and are highly compatible with materials like Ta/TaN, Co, and Ru.
What is reaction sputtering adaptation for WTi?
WTi allows for reaction sputtering in a mixed nitrogen/argon environment, which forms a WTiN composite film. This process further enhances both the barrier performance and the overall hardness of the film.