High-Purity Tungsten Titanium Alloy Target 300mm - China Suppliers & Factory
High barrier properties
WTi films have a very low diffusion coefficient, which can effectively prevent the diffusion of copper (Cu) atoms to the silicon substrate or dielectric layer, and is a key diffusion barrier material for copper interconnects in advanced processes.
Strong adhesion
The active properties of Ti significantly improve the bonding strength of the film with the substrate (such as SiO₂, low-k media) and the upper metal (such as Cu), and inhibit film peeling.
Low resistivity
The optimized grain boundary structure makes the film resistivity lower than that of pure TiN and other compounds, reducing the resistance of the interconnect line.
Uniform alloy phase structure
Through high-purity raw materials and homogenization processes, ensure the consistent distribution of target components and achieve high uniformity of film thickness and components.
High sputtering rate
High density and low impurities improve sputtering efficiency and reduce process costs.
Anti-noduling and arc control
Optimized grain size and microstructure reduce particle spatter and abnormal discharge during sputtering, ensuring process stability.
High temperature oxidation resistance
In the high temperature environment of PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.
Corrosion resistance
It has strong resistance to etching gas and wet cleaning solution to ensure subsequent process compatibility.
Reaction sputtering adaptation
WTiN composite film can be sputtered in a mixed nitrogen/argon atmosphere to further improve the barrier performance and hardness.
Multilayer film integration
Compatible with Ta/TaN, Co, Ru and other film materials, supporting complex laminated structure design.