High-Quality Tungsten Titanium Alloy Target 300mm - China Suppliers & Factory
Characteristics
Film Performance & Process Adaptability
- High barrier properties: WTi films have a very low diffusion coefficient, which can effectively prevent the diffusion of copper (Cu) atoms to the silicon substrate or dielectric layer, and is a key diffusion barrier material for copper interconnects in advanced processes.
- Strong adhesion: The active properties of Ti significantly improve the bonding strength of the film with the substrate (such as SiO₂, low-k media) and the upper metal (such as Cu), and inhibit film peeling.
- Low resistivity: The optimized grain boundary structure makes the film resistivity lower than that of pure TiN and other compounds, reducing the resistance of the interconnect line.
Stability of the Sputtering Process
- Uniform alloy phase structure: Through high-purity raw materials and homogenization processes, ensure the consistent distribution of target components and achieve high uniformity of film thickness and components.
- High sputtering rate: high density and low impurities improve sputtering efficiency and reduce process costs.
- Anti-noduling and arc control: Optimized grain size and microstructure reduce particle spatter and abnormal discharge during sputtering, ensuring process stability.
Chemistry & Thermal Stability
- High temperature oxidation resistance: In the high temperature environment of PVD cavity (300-500°C), WTi film maintains structural stability and inhibits performance degradation caused by oxidation.
- Corrosion resistance: It has strong resistance to etching gas and wet cleaning solution to ensure subsequent process compatibility.
Flexible Process Compatibility
- Reaction sputtering adaptation: WTiN composite film can be sputtered in a mixed nitrogen/argon atmosphere to further improve the barrier performance and hardness.
- Multilayer film integration: compatible with Ta/TaN, Co, Ru and other film materials, supporting complex laminated structure design.
Frequently Asked Questions
What are the primary characteristics of WTi films?
WTi (Tungsten-Titanium) films are characterized by high diffusion barrier properties, strong substrate adhesion, low electrical resistivity, and high chemical and thermal stability, making them ideal for advanced semiconductor processes.
Why is WTi used as a diffusion barrier in copper interconnects?
WTi films have an exceptionally low diffusion coefficient, which effectively prevents copper (Cu) atoms from migrating into the silicon substrate or dielectric layers, ensuring device reliability.
How does WTi film improve adhesion to substrates?
The active properties of Titanium (Ti) within the WTi alloy significantly enhance bonding strength with dielectric layers (such as SiO₂ and low-k media) and upper metal layers, effectively preventing film peeling.
What ensures the stability of the WTi sputtering process?
Process stability is achieved through a uniform alloy phase structure, high-purity raw materials, high sputtering rates, and optimized microstructures that control arcing and reduce particle nodulation.
Can WTi films withstand high temperatures during manufacturing?
Yes, WTi films exhibit excellent high-temperature oxidation resistance, maintaining structural stability and performance within PVD cavity environments ranging from 300°C to 500°C.
How does WTi adapt to complex multi-layer designs?
WTi is highly compatible with other film materials such as Ta/TaN, Co, and Ru, and can be sputtered in a nitrogen/argon atmosphere to form WTiN composite films for enhanced hardness and barrier properties.