MoTi Alloy Target for Hard Coating: High-Quality Core Material from China Suppliers and Factory
Its core value is that it can effectively block the spread of copper atoms to the surrounding dielectric materials in high-temperature processes, and is a key barrier to maintain the electrical integrity and yield of semiconductor copper interconnect structures.
As a metal alloy barrier layer, its resistivity is much lower than that of compound barriers such as titanium nitride, which helps reduce the RC delay of interconnect wires in integrated circuits.
By adjusting the Ti/Mo ratio, the work function can be adjusted within a certain range to meet the specific needs of different optoelectronic devices for matching the energy level of the electrode interface.
The deposited film exhibits strong adhesion to silicon, silica, glass, and various polymer substrates, making it ideal for solving interlayer adhesion problems.
The film has both high hardness and good toughness, which can significantly enhance the anti-wear and scratch resistance of the protected workpiece, and extend the service life.
The thin film structure is not prone to grain coarsening or phase change in high-temperature environments, and can withstand erosion from various chemical environments, ensuring the reliability of devices under harsh conditions.
The optimized alloy composition significantly improves the ion bombardment efficiency during sputtering, resulting in higher deposition rates and material utilization.
Thanks to the microstructure of the target with high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), high-quality film deposition with highly uniform film thickness distribution (inhomogeneity ≤5%), smooth surface, and very low defect density can be achieved.
Ultra-high purity raw materials (≥99.95%) and tightly controlled low gas content (oxygen, nitrogen, etc.) ensure a stable sputtering process, minimize micro-arcing and particle jetting, and reduce film defects.
The film acts as a key barrier that effectively blocks the spread of copper atoms to surrounding dielectric materials during high-temperature processes, maintaining the electrical integrity and yield of the interconnect structures.
Its resistivity is significantly lower than that of compound barriers like titanium nitride, which helps reduce the RC delay of interconnect wires in integrated circuits.
Yes, by adjusting the Ti/Mo ratio, the work function can be tuned within a specific range to meet the energy level matching requirements of different optoelectronic electrode interfaces.
The deposited film exhibits strong adhesion to a variety of substrates, including silicon, silica, glass, and various polymer substrates, effectively solving interlayer adhesion issues.
The high-quality film deposition is achieved thanks to the target's high density (≥ 99.5% theoretical density) and fine grain size (typically ≤ 30 μm), resulting in an thickness inhomogeneity of ≤5%.
By utilizing ultra-high purity raw materials (≥99.95%) and keeping gas content (oxygen, nitrogen, etc.) tightly controlled, the sputtering process remains highly stable, minimizing micro-arcing, particle jetting, and film defects.