MoTi Alloy Target: High-Performance Hard Coating Material from China Suppliers & Factory
Copper diffusion blocking ability
Its core value is that it can effectively block the spread of copper atoms to the surrounding dielectric materials in high-temperature processes, and is a key barrier to maintain the electrical integrity and yield of semiconductor copper interconnect structures.
Excellent electrical conductivity
As a metal alloy barrier layer, its resistivity is much lower than that of compound barriers such as titanium nitride, which helps reduce the RC delay of interconnect wires in integrated circuits.
Adjustable Work Function and Optical Performance
By adjusting the Ti/Mo ratio, the work function can be adjusted within a certain range to meet the specific needs of different optoelectronic devices for matching the energy level of the electrode interface.
Interfacial Bonding
The deposited film exhibits strong adhesion to silicon, silica, glass, and various polymer substrates, making it ideal for solving interlayer adhesion problems.
Mechanical properties
The film has both high hardness and good toughness, which can significantly enhance the anti-wear and scratch resistance of the protected workpiece, and extend the service life.
Thermal and chemical stability
The thin film structure is not prone to grain coarsening or phase change in high-temperature environments, and can withstand erosion from various chemical environments, ensuring the reliability of devices under harsh conditions.
High Deposition Rate and Efficiency
The optimized alloy composition significantly improves the ion bombardment efficiency during sputtering, resulting in higher deposition rates and material utilization.
Extreme uniformity and low defect film deposition
Thanks to the microstructure of the target with high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), high-quality film deposition with highly uniform film thickness distribution (inhomogeneity ≤5%), smooth surface, and very low defect density can be achieved.
Extreme purity, stability and reliability
Ultra-high purity raw materials (≥99.95%) and tightly controlled low gas content (oxygen, nitrogen, etc.) ensure a stable sputtering process, minimize micro-arcing and particle jetting, and reduce film defects.
How does the film prevent copper diffusion in semiconductor structures?
Its core value is that it can effectively block the spread of copper atoms to the surrounding dielectric materials in high-temperature processes, acting as a key barrier to maintain the electrical integrity and yield of semiconductor copper interconnect structures.
How does the electrical conductivity of this metal alloy barrier compare to other materials?
As a metal alloy barrier layer, its resistivity is much lower than that of compound barriers such as titanium nitride, which significantly helps reduce the RC delay of interconnect wires in integrated circuits.
Can the work function and optical performance of the film be customized?
Yes. By adjusting the Ti/Mo ratio, the work function can be adjusted within a certain range to meet the specific needs of different optoelectronic devices for matching the energy level of the electrode interface.
What substrates are compatible for interfacial bonding?
The deposited film exhibits strong adhesion to silicon, silica, glass, and various polymer substrates, making it ideal for solving interlayer adhesion problems.
How does the film maintain stability in harsh environments?
The thin film structure is not prone to grain coarsening or phase change in high-temperature environments, and can withstand erosion from various chemical environments, ensuring the reliability of devices under harsh conditions.
What target specifications ensure extreme uniformity and low defect film deposition?
High-quality deposition is achieved thanks to the microstructure of the target with high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm). This yields a highly uniform film thickness distribution (inhomogeneity ≤5%), smooth surfaces, and very low defect density.