MoTi Alloy Target: High-Quality PVD Sputtering Target from China Suppliers and Factory for Hard Coating Applications
Its core value is that it can effectively block the spread of copper atoms to the surrounding dielectric materials in high-temperature processes, and is a key barrier to maintain the electrical integrity and yield of semiconductor copper interconnect structures.
As a metal alloy barrier layer, its resistivity is much lower than that of compound barriers such as titanium nitride, which helps reduce the RC delay of interconnect wires in integrated circuits.
By adjusting the Ti/Mo ratio, the work function can be adjusted within a certain range to meet the specific needs of different optoelectronic devices for matching the energy level of the electrode interface.
The deposited film exhibits strong adhesion to silicon, silica, glass, and various polymer substrates, making it ideal for solving interlayer adhesion problems.
The film has both high hardness and good toughness, which can significantly enhance the anti-wear and scratch resistance of the protected workpiece, and extend the service life.
The thin film structure is not prone to grain coarsening or phase change in high-temperature environments, and can withstand erosion from various chemical environments, ensuring the reliability of devices under harsh conditions.
The optimized alloy composition significantly improves the ion bombardment efficiency during sputtering, resulting in higher deposition rates and material utilization.
Thanks to the microstructure of the target with high density (≥ 99.5% theoretical density) and fine grains (typically ≤ 30 μm), high-quality film deposition with highly uniform film thickness distribution (inhomogeneity ≤5%), smooth surface, and very low defect density can be achieved.
Ultra-high purity raw materials (≥99.95%) and tightly controlled low gas content (oxygen, nitrogen, etc.) ensure a stable sputtering process, minimize micro-arcing and particle jetting, and reduce film defects.
The film acts as a key barrier that effectively blocks the spread of copper atoms to the surrounding dielectric materials during high-temperature processes, maintaining electrical integrity and yield.
As a metal alloy barrier layer, its resistivity is significantly lower than that of compound barriers like titanium nitride, which effectively helps to reduce the RC delay of interconnect wires in integrated circuits.
Yes, by adjusting the Ti/Mo ratio, the work function can be adjusted within a specific range to meet the unique requirements of different optoelectronic devices for energy level matching.
The deposited film exhibits strong interfacial bonding and adhesion to silicon, silica, glass, and various polymer substrates, solving interlayer adhesion issues.
With a high density of ≥ 99.5% theoretical density and fine grains (typically ≤ 30 μm), it achieves highly uniform film thickness distribution (inhomogeneity ≤5%), smooth surfaces, and low defect density.
Ultra-high purity raw materials (≥99.95%) and tightly controlled low gas content (oxygen, nitrogen, etc.) ensure a stable sputtering process, minimizing micro-arcing, particle jetting, and film defects.