Reliable 300mm WSi Target for Enhanced Performance by China Suppliers - High-Quality Factory Products
Characteristics
High Sputtering Performance
- High sputtering rate: high density (≥9.5 g/cm³) and high purity (≥99.995%) improve sputtering efficiency and reduce process cost;
- Uniform film formation: Controllable die size (typically ≤ 50μm) to ensure uniformity of surface thickness (non-uniformity ≤3%) on large wafers;
- Low particle pollution: The dense microstructure reduces the release of fine particles during sputtering and improves yield.
Compatibility of Chemistry and Technology
- Antioxidant and corrosion resistance: resists oxidation at high temperature and plasma environment, and is compatible with harsh processes such as PVD/CVD;
- Low stress control: The internal stress of the film can be adjusted to reduce the risk of wafer warpage and interface defects.
- High etching selectivity: Excellent etching selectivity with photoresist and dielectric layers, simplifying the graphic process;
Excellent Thin Film Properties
- Low resistivity: low resistivity of the film (about 50–70μΩ·cm), which significantly reduces the circuit interconnection resistance and improves the switching speed of the device;
- High thermal stability: high temperature resistance (>1000°C), maintaining chemical stability in subsequent annealing processes, inhibiting elemental diffusion;
- Strong interfacial adhesion: Excellent bonding with silicon substrate and SiO₂ dielectric layer, avoiding film peeling problems.
Frequently Asked Questions (FAQ)
What are the density and purity specifications of the sputtering target?
The sputtering target features a high density of ≥9.5 g/cm³ and a high purity of ≥99.995%. This high density and purity level improves overall sputtering efficiency and reduces processing costs.
How does this product ensure uniform film formation on large wafers?
It maintains a controllable die size of typically ≤ 50μm, which guarantees a highly uniform surface thickness on large wafers, keeping thickness non-uniformity to ≤3%.
Is this material compatible with harsh semiconductor processes?
Yes. It offers excellent antioxidant and corrosion resistance under high temperatures and plasma environments, making it fully compatible with harsh fabrication processes like PVD and CVD.
What is the electrical resistivity of the deposited thin film?
The deposited thin film features a low resistivity of approximately 50–70μΩ·cm. This effectively reduces circuit interconnection resistance and enhances the switching speed of the device.
How does the film perform under high-temperature annealing?
The thin film exhibits high thermal stability with resistance exceeding 1000°C. It maintains excellent chemical stability during subsequent annealing stages and prevents elemental diffusion.
How does it prevent wafer warpage and interface peeling?
It features controllable low internal stress to minimize wafer warpage risks, combined with strong interfacial adhesion that ensures excellent bonding with silicon substrates and SiO₂ dielectric layers to prevent peeling.