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Reliable 300mm WSi Target for Enhanced Performance
Characteristics
High sputtering performance
High sputtering rate: high density (≥9.5 g/cm³) and high purity (≥99.995%) improve sputtering efficiency and reduce process cost;
Uniform film formation: Controllable die size (typically ≤ 50μm) to ensure uniformity of surface thickness (non-uniformity ≤3%) on large wafers;
Low particle pollution: The dense microstructure reduces the release of fine particles during sputtering and improves yield.
Compatibility of Chemistry and Technology
Antioxidant and corrosion resistance: resists oxidation at high temperature and plasma environment, and is compatible with harsh processes such as PVD/CVD;
Low stress control: The internal stress of the film can be adjusted to reduce the risk of wafer warpage and interface defects.
High etching selectivity: Excellent etching selectivity with photoresist and dielectric layers, simplifying the graphic process;
Excellent thin film properties
Low resistivity: low resistivity of the film (about 50–70μΩ·cm), which significantly reduces the circuit interconnection resistance and improves the switching speed of the device;
High thermal stability: high temperature resistance (>1000°C), maintaining chemical stability in subsequent annealing processes, inhibiting elemental diffusion;
Strong interfacial adhesion: Excellent bonding with silicon substrate and SiO₂ dielectric layer, avoiding film peeling problems.
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Application
Semiconductor Manufacturing
Gate engineering: replacing polysilicon for CMOS metal gates (such as high-K metal gate processes below 28nm);
Contact layer: ohmic contact layer of the transistor source/drain (WSi/Si contact resistance as low as 10⁻⁷ Ω·cm²);
Local interconnect: An embolic structure that connects the transistor to the first layer of metal (e.g., tungsten embolic diffusion barrier layer).
Manufacturing of Storage Devices
DRAM: The contact layer between the capacitive electrode and the bit line improves the stability of charge storage;
3D NAND: gate stacking structure of vertical channels, high-temperature resistance is suitable for stepped etching process;
Power and Compound Semiconductors
Power devices: gate metallization of SiC/GaN devices to withstand high-temperature working environments;
RF devices: low-resistance thin films reduce the parasitic resistance of the device and improve high-frequency performance.
Other high-end fields
Flat panel display: the thin film deposition of the gate and signal line of the TFT backplane;
Irradiation-resistant devices: radiation-hardened metal layers of aerospace electronic components.
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