Reliable 300mm WSi Target from China Suppliers and Factory for Enhanced Semiconductor Performance
Characteristics
High Sputtering Performance
- High sputtering rate: high density (≥9.5 g/cm³) and high purity (≥99.995%) improve sputtering efficiency and reduce process cost;
- Uniform film formation: Controllable die size (typically ≤ 50μm) to ensure uniformity of surface thickness (non-uniformity ≤3%) on large wafers;
- Low particle pollution: The dense microstructure reduces the release of fine particles during sputtering and improves yield.
Compatibility of Chemistry & Technology
- Antioxidant and corrosion resistance: resists oxidation at high temperature and plasma environment, and is compatible with harsh processes such as PVD/CVD;
- Low stress control: The internal stress of the film can be adjusted to reduce the risk of wafer warpage and interface defects.
- High etching selectivity: Excellent etching selectivity with photoresist and dielectric layers, simplifying the graphic process;
Excellent Thin Film Properties
- Low resistivity: low resistivity of the film (about 50–70μΩ·cm), which significantly reduces the circuit interconnection resistance and improves the switching speed of the device;
- High thermal stability: high temperature resistance (>1000°C), maintaining chemical stability in subsequent annealing processes, inhibiting elemental diffusion;
- Strong interfacial adhesion: Excellent bonding with silicon substrate and SiO₂ dielectric layer, avoiding film peeling problems.
Frequently Asked Questions
What are the density and purity specifications of the sputtering material?
The material features a high density of ≥9.5 g/cm³ and a high purity of ≥99.995%. These properties help improve sputtering efficiency and reduce overall process costs.
How does the material ensure uniform film thickness on large wafers?
Uniform film formation is achieved through a controllable die size (typically ≤ 50μm), which ensures surface thickness uniformity with a non-uniformity rate of ≤3% on large wafers.
Is the material compatible with high-temperature processes like PVD and CVD?
Yes, the material exhibits excellent antioxidant and corrosion resistance, allowing it to resist oxidation at high temperatures and in plasma environments. This makes it highly compatible with harsh PVD and CVD processes.
How does the film prevent wafer warpage and interface defects?
By utilizing low stress control, the internal stress of the film can be easily adjusted to minimize the risk of wafer warpage and interface defects during manufacturing.
What is the resistivity of the thin film, and how does it affect device performance?
The thin film has a low resistivity of about 50–70μΩ·cm. This low resistivity significantly reduces circuit interconnection resistance, which in turn improves the switching speed of the device.
Can the thin film maintain stability during subsequent annealing processes?
Yes, the film has high thermal stability and can withstand temperatures exceeding 1000°C. It maintains chemical stability during subsequent annealing processes, which inhibits elemental diffusion and avoids film peeling issues.