Reliable 300mm WSi Target from China Suppliers - High-Performance Tungsten Silicide for Enhanced Semiconductor Coating
Characteristics
- High sputtering rate: high density (≥9.5 g/cm³) and high purity (≥99.995%) improve sputtering efficiency and reduce process cost;
- Uniform film formation: Controllable die size (typically ≤ 50μm) to ensure uniformity of surface thickness (non-uniformity ≤3%) on large wafers;
- Low particle pollution: The dense microstructure reduces the release of fine particles during sputtering and improves yield.
- Antioxidant and corrosion resistance: resists oxidation at high temperature and plasma environment, and is compatible with harsh processes such as PVD/CVD;
- Low stress control: The internal stress of the film can be adjusted to reduce the risk of wafer warpage and interface defects.
- High etching selectivity: Excellent etching selectivity with photoresist and dielectric layers, simplifying the graphic process;
- Low resistivity: low resistivity of the film (about 50–70μΩ·cm), which significantly reduces the circuit interconnection resistance and improves the switching speed of the device;
- High thermal stability: high temperature resistance (>1000°C), maintaining chemical stability in subsequent annealing processes, inhibiting elemental diffusion;
- Strong interfacial adhesion: Excellent bonding with silicon substrate and SiO₂ dielectric layer, avoiding film peeling problems.
Frequently Asked Questions (FAQ)
High density (≥9.5 g/cm³) and high purity (≥99.995%) significantly improve sputtering efficiency, accelerate the deposition rate, and lower overall processing costs.
By maintaining a controllable die size (typically ≤ 50μm), the material ensures surface thickness uniformity with a non-uniformity rate of ≤3% across large wafers.
Yes, it features high antioxidant and corrosion resistance at high temperatures and plasma environments, making it fully compatible with PVD and CVD processes.
Yes, the internal stress of the film is adjustable, allowing for low stress control which minimizes the risk of wafer warpage and interface defects.
The film offers a low resistivity of 50–70μΩ·cm to reduce circuit resistance, and high thermal stability (>1000°C) to prevent elemental diffusion during subsequent annealing.
Absolutely. It provides strong interfacial adhesion and excellent bonding with both silicon substrates and SiO₂ dielectric layers, preventing film peeling.