Reliable 300mm WSi Tungsten Silicide Sputtering Target from China Suppliers and Factory for Enhanced Performance
Characteristics
High Sputtering Performance
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High sputtering rate
High density (≥9.5 g/cm³) and high purity (≥99.995%) improve sputtering efficiency and reduce process cost.
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Uniform film formation
Controllable die size (typically ≤ 50μm) to ensure uniformity of surface thickness (non-uniformity ≤3%) on large wafers.
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Low particle pollution
The dense microstructure reduces the release of fine particles during sputtering and improves yield.
Compatibility of Chemistry & Tech
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Antioxidant and corrosion resistance
Resists oxidation at high temperature and plasma environment, and is compatible with harsh processes such as PVD/CVD.
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Low stress control
The internal stress of the film can be adjusted to reduce the risk of wafer warpage and interface defects.
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High etching selectivity
Excellent etching selectivity with photoresist and dielectric layers, simplifying the graphic process.
Excellent Thin Film Properties
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Low resistivity
Low resistivity of the film (about 50–70μΩ·cm), which significantly reduces the circuit interconnection resistance and improves the switching speed of the device.
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High thermal stability
High temperature resistance (>1000°C), maintaining chemical stability in subsequent annealing processes, inhibiting elemental diffusion.
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Strong interfacial adhesion
Excellent bonding with silicon substrate and SiO₂ dielectric layer, avoiding film peeling problems.
Frequently Asked Questions
Q1: What are the key sputtering performance metrics of this material?
A1: It delivers high sputtering performance characterized by a high density (≥9.5 g/cm³) and high purity (≥99.995%), which greatly enhances sputtering efficiency and lowers production costs.
Q2: How does the material maintain uniformity across large wafers?
A2: With a controllable die size typically restricted to ≤ 50μm, it guarantees surface thickness uniformity with a non-uniformity rate of ≤3% across large wafers.
Q3: Is the film compatible with high-temperature semiconductor processes?
A3: Yes. The material exhibits outstanding thermal stability, resisting temperatures exceeding 1000°C. It maintains chemical stability during subsequent annealing stages and prevents element diffusion.
Q4: What electrical characteristics does the deposited film offer?
A4: The film exhibits low resistivity, measuring approximately 50–70μΩ·cm. This effectively minimizes circuit interconnection resistance and boosts the device's switching speed.
Q5: How does this material prevent film peeling and wafer warpage?
A5: It provides exceptionally strong interfacial adhesion to both silicon substrates and SiO₂ dielectric layers to prevent peeling. Additionally, controllable internal stress minimizes the risk of wafer warpage and interface defects.