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Silicon Carbide: The Future of High-Performance Materials
Ultra-high purity and controllable composition
Purity ≥4N (99.99%) to ensure that the deposited film is free of impurity pollution and meets the requirements of semiconductor-level processes; Low oxygen content (<500ppm): avoid film oxidation defects and improve interface quality.
Extreme environmental stability
High temperature resistance, melting point > 2700°C, no melting deformation under PVD high-energy plasma bombardment; And it is resistant to plasma erosion, the surface corrosion rate is much lower than that of metal targets, the life is increased by 3-5 times, and the frequency of shutdown and target change is reduced. It is also chemically inert, resistant to corrosion of Ar, N₂, O₂ and other process gases, and does not produce by-product pollution.
Mechanical and thermal reliability
High hardness (Hv>2500), resistant to clamping stress and cooling thermal shock on the back side, anti-cracking; In addition, it also has a low coefficient of thermal expansion, which is well matched with the copper/molybdenum backplate and reduces the risk of thermal cycling delamination. And it has high thermal conductivity, efficient heat dissipation, and avoids component segregation caused by local overheating.
Purity ≥4N (99.99%) to ensure that the deposited film is free of impurity pollution and meets the requirements of semiconductor-level processes; Low oxygen content (<500ppm): avoid film oxidation defects and improve interface quality.
Extreme environmental stability
High temperature resistance, melting point > 2700°C, no melting deformation under PVD high-energy plasma bombardment; And it is resistant to plasma erosion, the surface corrosion rate is much lower than that of metal targets, the life is increased by 3-5 times, and the frequency of shutdown and target change is reduced. It is also chemically inert, resistant to corrosion of Ar, N₂, O₂ and other process gases, and does not produce by-product pollution.
Mechanical and thermal reliability
High hardness (Hv>2500), resistant to clamping stress and cooling thermal shock on the back side, anti-cracking; In addition, it also has a low coefficient of thermal expansion, which is well matched with the copper/molybdenum backplate and reduces the risk of thermal cycling delamination. And it has high thermal conductivity, efficient heat dissipation, and avoids component segregation caused by local overheating.
Semiconductor Manufacturing
Functional Films and Coatings
Optics and Sensors
Power devices: SiC thin films are used in Schottky diode passivation layers and MOSFET gate media to improve voltage resistance and reliability;
Surface passivation layer in GaN HEMT devices to inhibit current collapse;
Surface passivation layer in GaN HEMT devices to inhibit current collapse;
Third-generation semiconductor epitaxy: as a buffer/template layer, grow high-quality SiC epitaxial wafers.
Functional Films and Coatings
Wear-resistant coating: SiC film deposited on the surface of tools and bearings;
Nuclear reactor cladding coating: SiC composite coating;
Aerospace thermal protection: SiC antioxidant coating on engine components.
Optics and Sensors
Infrared window anti-reflection film: SiC film is used for infrared optical components in the 3-5μm band;
MEMS sensor passivation layer: corrosion-resistant media contact (biochip, chemical sensor).
