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Advanced Ceramic Components for Semiconductor Equipment: Industrialization Requirements and Material Profiles

Cause Analysis of Pore Formation and Densification Measures in Alumina Ceramics Preparation

In today's rapidly advancing technological landscape, the field of semiconductor materials is undergoing a profound transformation. The third-generation wide bandgap semiconductor material Silicon Carbide (SiC), with its outstanding physical properties, is emerging prominently in numerous high-tech applications, attracting global attention.

In the modern industrial field where speed and precision are paramount, ceramic arms, with their unique technological appeal and exceptional performance, are gradually becoming a key support for numerous high-precision industries.

Hexagonal boron nitride is a crystal composed of nitrogen and boron atoms, with a molecular formula of BN and a molecular weight of 24.81. Its chemical composition consists of 43.6% boron and 56.4% nitrogen, and it has a theoretical density of 2.27 g/cm³. Boron nitride (BN) includes five isomers: hexagonal boron nitride (h-BN), wurtzite boron nitride (w-BN), rhombohedral boron nitride (r-BN), cubic boron nitride (c-BN), and orthorhombic boron nitride (o-BN). As a novel ceramic material with excellent properties and significant growth potential, it is widely used in the fields of machinery, metallurgy, chemical engineering, electronics, nuclear energy, and aerospace. BN powder exhibits properties such as looseness, lubrication, Lightweight, and ease of moisture absorption. The most common forms are hexagonal boron nitride (h-BN) and cubic boron nitride (c-BN).

Silicon nitride ceramics have become indispensable key materials in fields such as machinery, semiconductors, and aerospace due to their high strength, high-temperature resistance, and corrosion resistance. However, from laboratory preparation to industrial production, the core processes still face numerous practical challenges.

In the IC industry, integrated circuit manufacturing equipment holds a critically important strategic position. The key technologies and equipment for integrated circuit manufacturing include photolithography technology and equipment, thin film growth technology and equipment, chemical mechanical polishing technology and equipment, as well as high-density packaging technology and equipment. These all involve motion control technology and drive technology that require high efficiency, high precision, and high stability, imposing extremely high demands on the accuracy of structural components and the performance of structural materials.

Boron carbide: It was discovered in the 19th century as a byproduct of research on metal borides, and it was not scientifically studied until the 1930s. It is the fifth known hardest material after boron nitride, diamond, fullerene compounds, and diamond fibers.

High-purity alumina ceramics are important ceramic materials primarily composed of high-purity ultra-fine alumina, with α-Al₂O₃ as the main crystalline phase. Due to their excellent properties such as high mechanical strength, great hardness, high-temperature resistance, and corrosion resistance, high-purity alumina ceramics are widely used in various fields including machinery, electronics, integrated circuits, and medicine.

Tungsten and its alloys are ideal candidate materials for key components in nuclear fusion reactors due to their excellent high-temperature performance, radiation resistance, and mechanical properties. This article reviews the research progress on the applications of tungsten and tungsten alloys in the field of nuclear fusion, focusing on their performance in plasma-material interactions, thermal load capacity, and radiation damage.