China Molybdenum Target Suppliers - High-Purity Cathode Material for Sputter Coating Factory
High-temperature stability and mechanical properties
Ultra-high melting point (2623°C)
Can maintain structural stability in high-temperature sputtering environment (300~800°C) and has strong resistance to thermal deformation.
High-temperature strength
Still maintains high hardness and creep resistance at high temperatures, ensuring that the target material does not crack or deform during long-term processes.
Thermal expansion coefficient (4.8×10⁻⁶/K)
Good thermal compatibility with silicon and glass substrates, reducing delamination or cracking caused by thermal stress of the film.
Conductivity and thermal management performance
High conductivity
Improve sputtering efficiency and reduce process energy consumption.
High thermal conductivity
Quickly conducts sputtering heat to prevent target cracking or droplet splashing caused by local overheating, and ensures the uniformity of the film layer.
Characteristics of Thin Film Deposition
Low sputtering rate
High power excitation is required, but the sedimentary film layer is dense and the adhesion is strong.
High density
Reduce porosity and defects during sputtering, improve film purity and compactness.
Controllable grain size
Achieve fine grain structure through process optimization, reduce sputtering particles, and improve the surface finish of the film layer.
Chemical stability and multifunctionality
Corrosion resistance
Resistant to most acids, alkalis and process gases (such as O₂, N₂), suitable for reactive sputtering (such as deposited MoO₃, MoN).
Low oxygen affinity
Not easy to oxidize at high temperature, maintain the characteristics of high-purity metal film (need to control the oxygen content of the cavity).
Frequently Asked Questions
How does the material perform under high-temperature sputtering environments?
With an ultra-high melting point of 2623°C, the material maintains excellent structural stability and resists thermal deformation in sputtering environments ranging from 300°C to 800°C.
Why is the thermal expansion coefficient of this material important?
Its thermal expansion coefficient of 4.8×10⁻⁶/K provides excellent thermal compatibility with silicon and glass substrates, which significantly reduces film cracking or delamination caused by thermal stress.
What are the benefits of its high thermal conductivity during processing?
High thermal conductivity allows sputtering heat to dissipate rapidly. This prevents local overheating, target cracking, or droplet splashing, ensuring a highly uniform film layer.
How does a low sputtering rate affect thin film deposition?
Although a low sputtering rate requires higher power excitation, it results in a highly dense sedimentary film layer with exceptionally strong adhesion.
What chemical environments is this material resistant to?
It is resistant to most acids, alkalis, and process gases like oxygen (O₂) and nitrogen (N₂), making it highly suitable for reactive sputtering applications such as depositing MoO₃ and MoN.
How can oxidation be avoided during high-temperature operations?
The material has a low oxygen affinity and does not oxidize easily at high temperatures. However, to maintain the characteristics of a high-purity metal film, the oxygen content of the process cavity must be strictly controlled.