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MoSi alloy target:excellent Film uniformity

MoSi alloy target materials are sputtering targets made from high-purity molybdenum (Mo) and silicon (Si) in precise ratios, specifically designed for physical vapor deposition (PVD) processes such as magnetron sputtering. Their unique electrical properties, high-temperature stability, and good film uniformity make them of significant importance in fields such as semiconductor integrated circuits, advanced display technologies, high-temperature protective coatings, and optical functional films.

    Film properties

    Low Resistivity: MoSi films have low resistivity, making them suitable for high-performance conductive layer requirements.

    High-temperature stability: It can maintain structural stability in high-temperature environments, with strong oxidation resistance, and can maintain its performance in high-temperature processes.

    Adhesion: Strong bonding with substrates such as silicon-based, glass, and oxides, suitable as a transitional or functional layer.

    Efficient sputtering performance

    Low Resistivity: MoSi films have low resistivity, making them suitable for high-performance conductive layer requirements.

    High-temperature stability: It can maintain structural stability in high-temperature environments, with strong oxidation resistance, and can maintain its performance in high-temperature processes.

    Good adhesion: Strong bonding with substrates such as silicon-based, glass, and oxides, suitable as a transitional or functional layer.

    Chemical and Functional Compatibility


    Oxidation and corrosion resistance: Forms a dense SiO₂ protective layer on the surface in high-temperature air, preventing further oxidation.

    Etching performance: Compatible with common lithography processes, both dry and wet etching can achieve high-precision graphics.

    Adjustable Silicon Content: By adjusting the Mo/Si ratio, it can adapt to the electrical and optical requirements of different application scenarios.

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    Semiconductors and Microelectronics

    Gate and Interconnect Materials: Used for gate electrodes and local interconnect layers in integrated circuits, especially for high-temperature processes.

    Diffusion Barrier Layer: Effectively blocks the diffusion of metal atoms, improving device reliability and longevity.

    Efficient sputtering performance

    Low Resistivity: MoSi films have low resistivity, making them suitable for high-performance conductive layer requirements.

    High-temperature stability: It can maintain structural stability in high-temperature environments, with strong oxidation resistance, and can maintain its performance in high-temperature processes.

    Good adhesion: Strong bonding with substrates such as silicon-based, glass, and oxides, suitable as a transitional or functional layer.

    Chemical and Functional Compatibility


    Oxidation and corrosion resistance: Forms a dense SiO₂ protective layer on the surface in high-temperature air, preventing further oxidation.

    Etching performance: Compatible with common lithography processes, both dry and wet etching can achieve high-precision graphics.

    Adjustable Silicon Content: By adjusting the Mo/Si ratio, it can adapt to the electrical and optical requirements of different application scenarios.


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    MoSi target properties table