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CrSi alloy target:customizable to different specifications

CrSi alloy target materials are high-purity alloy sputtering targets formed by a precise ratio of chromium (Cr) and silicon (Si) (with silicon content typically ranging between 10–50 at%), specifically designed for physical vapor deposition (PVD) processes such as magnetron sputtering. Their unique composite characteristics of semiconductor and metal impart them with critical application value in fields such as semiconductor integrated circuits, functional film sensors, and high-temperature protective coatings.

    Functional characteristics of thin films

    Controllable resistance characteristics: CrSi thin films have a wide resistivity range, which allows for high-precision resistor preparation through composition adjustment.

    High Thermal Stability: Maintains stable electrical properties in high-temperature environments (≤800°C), making it suitable for high-temperature devices.

    Strong adhesion and corrosion resistance: Strong bonding with ceramic and silicon substrates, and resistance to acidic and oxidative environmental corrosion.

    Efficient sputtering performance

    Uniform alloy structure: High density and low porosity ensure uniform and consistent sputtering film composition.

    Low sputtering defects: High purity (≥99.9%) and low impurity content (oxygen content ≤600 ppm) reduce film formation defects.

    Good crystallization control ability: The crystalline/amorphous structure of the thin film can be adjusted through process parameters to adapt to different application needs.

    Compatibility of Craft and Integration

    Low-temperature film deposition capability: Can be deposited at ≤200°C, compatible with temperature-sensitive silicon-based semiconductor processes.

    Etching and Graphing Friendly: Compatible with dry/wet etching processes with high graphic accuracy for micromachining.

    Compatible with semiconductor processes: Free of contaminating elements (e.g., sodium, potassium), meeting the requirements of integrated circuit manufacturing.

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    Semiconductors and Microelectronics

    Thin film resistor materials: Used in high-precision thin-film resistors (e.g., chip resistors, integrated circuit load resistors) to provide a stable temperature coefficient (TCR).

    Diffusion Barrier: Suppresses copper diffusion in copper interconnect structures to improve device reliability.

    Phase change memory: As the electrode contact layer of the Ge-Sb-Te series phase change memory.

    Sensors and Functional Devices

    Temperature sensors: CrSi thin films are used to prepare high-sensitivity temperature sensors (e.g., automotive electronics, industrial temperature control systems).

    Strain sensing layer: Used as a piezoresistive material in MEMS devices to achieve mechanical stress signal conversion.

    Photodetector: The contact electrode and signal transmission layer used for infrared detectors.

    New Energy and Optical Technology

    Solar Cell Electrodes: Act as the back contact layer or transparent conductive oxide (TCO) support layer for thin-film solar cells.

    Optically Controlled Film: Used as a reflective layer or absorption regulation layer for infrared optics.

    Data Storage and Advanced Packaging

    Magnetic Recording Head Material: Used as a lead or shield material in the hard disk head.

    Wafer-level packaging: Used for resistors and isolation layers for advanced packaging technologies such as U-Chip and TSV.

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    CrSi target properties table