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Molybdenum target:specifically used for sputter coating
High-temperature stability and mechanical properties
Ultra-high melting point: 2623°C, which can maintain structural stability in high-temperature sputtering environment (300~800°C) and has strong resistance to thermal deformation;
High-temperature strength: It still maintains high hardness and creep resistance at high temperatures, ensuring that the target material does not crack or deform during long-term processes;
Thermal expansion coefficient (4.8×10⁻⁶/K): Good thermal compatibility with silicon and glass substrates, reducing delamination or cracking caused by thermal stress of the film;
Conductivity and thermal management performance
High conductivity: improve sputtering efficiency and reduce process energy consumption;
High thermal conductivity: quickly conducts sputtering heat to prevent target cracking or droplet splashing caused by local overheating, and ensures the uniformity of the film layer;
Characteristics of Thin Film Deposition
Low sputtering rate: high power excitation is required, but the sedimentary film layer is dense and the adhesion is strong;
High density: reduce porosity and defects during sputtering, improve film purity and compactness;
Controllable grain size: Achieve fine grain structure through process optimization, reduce sputtering particles, and improve the surface finish of the film layer;
Chemical stability and multifunctionality
Chemical stability and multifunctionality
Corrosion resistance: Resistant to most acids, alkalis and process gases (such as O₂, N₂), suitable for reactive sputtering (such as deposited MoO₃, MoN);
Low oxygen affinity: not easy to oxidize at high temperature, maintain the characteristics of high-purity metal film (need to control the oxygen content of the cavity);
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Semiconductor manufacturing and Flat panel display
Interconnect and gate materials: for depositing Mo/MoN barrier layers;
Contact layer: as source/drain electrode in the OLED display TFT backplane;
TFT array electrode: deposited Mo/Al/Mo stacked structure;
Transparent conductive film (TCO) support layer: Mo back electrode for perovskite solar cells;
New Energy and Optical Devices
Thin-film solar cells: The back electrode material of CIGS (Copper Indium Gallium Selenide) cells;
Infrared mirrors: Optical devices made utilizing the high infrared reflectivity of molybdenum.
Infrared mirrors: Optical devices made utilizing the high infrared reflectivity of molybdenum.
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