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High-Purity Molybdenum Target for Sputter Coating - China Suppliers & Factory Products

Our molybdenum target material is crafted from high-purity molybdenum metal, utilizing advanced techniques such as powder metallurgy, thermal or isostatic pressing, and melting and casting processes. Manufactured in one of the leading factories in China, this material is specifically engineered for use as a cathode in physical vapor deposition and sputtering coating applications. When deployed within a vacuum chamber, the high-quality molybdenum atoms are effectively sputtered and deposited onto substrate surfaces via ion bombardment, resulting in a robust and functional thin film layer. As trusted suppliers, we ensure top-notch products designed to meet diverse industrial needs.

    High-temperature stability and mechanical properties
    Ultra-high melting point: 2623°C

    Can maintain structural stability in high-temperature sputtering environment (300~800°C) and has strong resistance to thermal deformation.

    High-temperature strength

    It still maintains high hardness and creep resistance at high temperatures, ensuring that the target material does not crack or deform during long-term processes.

    Thermal expansion coefficient (4.8×10⁻⁶/K)

    Good thermal compatibility with silicon and glass substrates, reducing delamination or cracking caused by thermal stress of the film.

    Conductivity and thermal management performance
    High conductivity

    Improve sputtering efficiency and reduce process energy consumption.

    High thermal conductivity

    Quickly conducts sputtering heat to prevent target cracking or droplet splashing caused by local overheating, and ensures the uniformity of the film layer.

    Characteristics of Thin Film Deposition
    Low sputtering rate

    High power excitation is required, but the sedimentary film layer is dense and the adhesion is strong.

    High density

    Reduce porosity and defects during sputtering, improve film purity and compactness.

    Controllable grain size

    Achieve fine grain structure through process optimization, reduce sputtering particles, and improve the surface finish of the film layer.

    Chemical stability and multifunctionality
    Corrosion resistance

    Resistant to most acids, alkalis and process gases (such as O₂, N₂), suitable for reactive sputtering (such as deposited MoO₃, MoN).

    Low oxygen affinity

    Not easy to oxidize at high temperature, maintain the characteristics of high-purity metal film (need to control the oxygen content of the cavity).

    Frequently Asked Questions (FAQ)
    Q: How does the high melting point of 2623°C benefit the sputtering process?

    It ensures excellent structural stability and prevents thermal deformation even in intense high-temperature sputtering environments ranging from 300°C to 800°C.

    Q: Why is the thermal expansion coefficient of 4.8×10⁻⁶/K significant?

    This coefficient provides optimal thermal compatibility with silicon and glass substrates, which minimizes film cracking or delamination caused by thermal stress.

    Q: What role does high thermal conductivity play in target durability?

    High thermal conductivity rapidly disperses local heat, preventing target cracking or droplet splashing caused by localized overheating, which ultimately guarantees a uniform film layer.

    Q: How does controllable grain size improve film quality?

    By optimizing the process to achieve a fine grain structure, it reduces the generation of sputtering particles and enhances the overall surface finish of the deposited film.

    Q: Is this material suitable for reactive sputtering applications?

    Yes, its high corrosion resistance to most acids, alkalis, and process gases (like O₂ and N₂) makes it ideal for depositing compound layers such as MoO₃ and MoN.