High-Performance Zinc Magnesium Oxide (MZO) Targets from China Suppliers and Factory for UV Optoelectronics
Adjustable Optoelectronic Properties
Adjustable bandgap
By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV for ZnO and 7.8 eV for MgO, which is key to realizing ultraviolet photonic devices.
High visible light transmittance
The material maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it suitable for transparent electronic devices.
Excellent crystal quality
Under appropriate Mg content and processing conditions, high-quality hexagonal wurtzite structure crystalline films can be formed, ensuring device performance.
High Sputtering Performance
Dense and uniform structure
High density (≥5.6 g/cm³) and high purity (≥99.99%) ensure stable sputtering process, high film quality, and minimal particle generation.
Stability of composition
Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process, ensuring consistency of the thin film composition.
Excellent process compatibility
Can be deposited under room to medium temperature conditions, compatible with various semiconductor processes.
Enhanced Physical and Chemical Properties
High thermal and chemical stability
The introduction of MgO enhances the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
High resistivity & Tunability
The intrinsic MZO film has high resistivity, making it an ideal choice for preparing buffer layers in semiconductor devices. Conductivity can be achieved through doping with elements such as Al and Ga, allowing for flexible applications.
Frequently Asked Questions (FAQ)
Q: How wide is the adjustable bandgap range for this material?
By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV (for ZnO) and 7.8 eV (for MgO), which is critical for ultraviolet photonic devices.
Q: Is the material transparent enough for optical applications?
Yes, it maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it highly suitable for transparent electronic devices.
Q: What is the density and purity level of the sputtering target?
The material features a high density of ≥5.6 g/cm³ and a high purity of ≥99.99%, which ensures a stable sputtering process, high film quality, and minimal particle generation.
Q: How is the composition consistency of the deposited thin film guaranteed?
Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process.
Q: Can this material be used in harsh working environments?
Yes, the introduction of MgO enhances both the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
Q: Can the conductivity of the high-resistivity MZO film be modified?
Yes, while the intrinsic MZO film has high resistivity (ideal for buffer layers), conductivity can be achieved through doping with elements such as Al and Ga for flexible applications.