Reliable 300mm WSi Target from China Suppliers and Factory for Enhanced Performance in Semiconductor Applications
Characteristics
High sputtering performance
- High sputtering rate: high density (≥9.5 g/cm³) and high purity (≥99.995%) improve sputtering efficiency and reduce process cost;
- Uniform film formation: Controllable die size (typically ≤ 50μm) to ensure uniformity of surface thickness (non-uniformity ≤3%) on large wafers;
- Low particle pollution: The dense microstructure reduces the release of fine particles during sputtering and improves yield.
Compatibility of Chemistry and Technology
- Antioxidant and corrosion resistance: resists oxidation at high temperature and plasma environment, and is compatible with harsh processes such as PVD/CVD;
- Low stress control: The internal stress of the film can be adjusted to reduce the risk of wafer warpage and interface defects.
- High etching selectivity: Excellent etching selectivity with photoresist and dielectric layers, simplifying the graphic process;
Excellent thin film properties
- Low resistivity: low resistivity of the film (about 50–70μΩ·cm), which significantly reduces the circuit interconnection resistance and improves the switching speed of the device;
- High thermal stability: high temperature resistance (>1000°C), maintaining chemical stability in subsequent annealing processes, inhibiting elemental diffusion;
- Strong interfacial adhesion: Excellent bonding with silicon substrate and SiO₂ dielectric layer, avoiding film peeling problems.
Frequently Asked Questions
Q:
What makes the sputtering performance of this material so high?
The high sputtering performance is driven by its high density (≥9.5 g/cm³) and high purity (≥99.995%), which significantly enhance sputtering efficiency and minimize overall process costs.
Q:
How does this material ensure uniform film thickness on large wafers?
By utilizing a controllable die size (typically ≤ 50μm), the material ensures surface thickness non-uniformity remains ≤3% across large wafer surfaces.
Q:
Is this material compatible with harsh fabrication processes like PVD and CVD?
Yes, it exhibits excellent antioxidant and corrosion resistance at high temperatures and in plasma environments, making it fully compatible with harsh PVD and CVD processes.
Q:
How does the material prevent wafer warpage and interface defects?
The internal stress of the deposited film can be precisely adjusted, allowing for low stress control that minimizes the risk of wafer warpage and interface defects.
Q:
What are the electrical and thermal properties of the resulting thin film?
The film features low resistivity (about 50–70μΩ·cm) to reduce circuit interconnection resistance, high thermal stability (>1000°C) to withstand subsequent annealing, and strong interfacial adhesion to prevent peeling.