Magnesium Zinc Oxide target：widely used in UV optoelectronics
Adjustable optoelectronic properties
Adjustable bandgap: By changing the doping ratio of Mg (x value), the bandgap can be continuously adjusted between 3.37 eV for ZnO and 7.8 eV for MgO, which is key to realizing ultraviolet photonic devices.
High visible light transmittance: The material maintains the high transparency of ZnO, with a transmittance greater than 80% in the visible light region, making it suitable for transparent electronic devices.
Excellent crystal quality: Under appropriate Mg content and processing conditions, high-quality hexagonal wurtzite structure crystalline films can be formed, ensuring device performance.
High sputtering performance
Dense and uniform structure: High density (≥5.6 g/cm³) and high purity (≥99.99%) ensure stable sputtering process, high film quality, and minimal particle generation.
Stability of composition: Advanced sintering technology ensures that Zn and Mg elements are evenly distributed in the target material, allowing for accurate composition transfer during the sputtering process, ensuring consistency of the thin film composition.
Excellent process compatibility: Can be deposited under room to medium temperature conditions, compatible with various semiconductor processes.
Enhanced physical and chemical properties
High thermal stability and chemical stability: The introduction of MgO enhances the thermal stability and corrosion resistance of the material, making it suitable for harsher working environments.
High resistivity: The intrinsic MZO film has high resistivity, making it an ideal choice for preparing buffer layers in semiconductor devices.Conductivity can be achieved through doping with elements such as Al and Ga, allowing for flexible applications.
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Ultraviolet photodetector
Day-blind ultraviolet detection: The bandgap of MZO films with high Mg content (x ~ 0.5) can be tuned to over 4.9 eV, corresponding to the 'day-blind' ultraviolet range (240-280 nm). These films can be utilized in areas such as missile early warning systems, fire monitoring, and non-line-of-sight confidential communications, where a very high signal-to-noise ratio is required.
Light emitting and Display Technology
LED Devices: As the barrier layer in the quantum well structure, they form a heterojunction with ZnO, used for the fabrication of ultraviolet and blue light-emitting diodes (LEDs) and laser diodes (LDs).
Display Thin-Film Transistors: Used in the channel layer of transparent flexible display backplanes, their tunable bandgap helps reduce the device's off-state current and improve the switching ratio.
Thin-film solar cells
Buffer layer materials: As a cadmium-free (Cd-free) buffer layer in thin-film solar cells such as copper indium gallium selenide (CIGS), the tunable bandgap characteristics can better match the energy bands of the absorber layer and window layer, thereby reducing interface recombination losses and improving the conversion efficiency of the cells.
Radiation Detection and Sensors
X-ray and High-Energy Particle Detection: The wide bandgap characteristics enable it to withstand strong radiation, making it suitable for X-ray imaging panels and radiation detection devices in high-energy physics experiments.
Gas Sensors: These sensors exhibit a sensitive electrical or optical response to certain gases, allowing for applications in environmental monitoring.
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